Single N-Channel Advanced Power MOSFET 100V/30A
100V/30A,RDS (ON) =33mΩ(Typ.)@VGS=10V RDS (ON) =45mΩ(Typ.)@VGS=4.5V,Low RDS (ON),Limited by TJmax, IAS =20A, L=0.5mH, VDD = 48V, RG = 25Ω , Starting TJ = 25°C,Pulse test;Pulse width≤300µs, duty cycle≤2%.
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