Single N-Channel Advanced Power MOSFET 30V/5.8A
30V/5.8A,RDS (ON) =21mΩ(Typ.)@VGS=10V,RDS (ON) =25mΩ(Typ.)@VGS=4.5V,RDS (ON) =34mΩ(Typ.)@VGS=2.5V,Limited by TJmax. Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.
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