Single N-Channel Advanced Power MOSFET 30V/8.8A
30V/8.8A,RDS (ON) =16mΩ(Typ.)@VGS=10V,RDS (ON) =24mΩ(Typ.)@VGS=4.5V,Limited by TJmax ,starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 6A, VGS =10V.Pulse width≤300µs, duty cycle≤2%.
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