Single N-Channel Advanced Power MOSFET 60V/50A
60V/50A,RDS (ON) =11mΩ(Typ.)@VGS=10V, RDS (ON) =15mΩ(Typ.)@VGS=4.5V,Limited by TJmax, IAS =27A, L=0.5mH, VDD = 30V, RG = 25Ω , Starting TJ = 25°C.Pulse width≤300µs, duty cycle≤2%.
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